Using the Effect of Mechanical Stress on Doped Silicon as an Angular Movement Sensor for MOEMS/MEMS Micro Mirrors

D. Berko^1, and Y.S. Diamand¹

¹Dept of Physical Electronics, P.O. Box 39040, Tel Aviv 69978, Israel

Cite this paper

D. Berko and Y.S. Diamand. Using the Effect of Mechanical Stress on Doped Silicon as an Angular Movement Sensor for MOEMS/MEMS Micro Mirrors. American Journal of Electrical and Electronic Engineering. 2014; 2(3):88-91. doi: 10.12691/AJEEE-2-3-5

Abstract

The effect of elastic strain of moderate magnitude using high doped silicon substrate can change the conductivity of the substrate. The commonly used metal (strain) gage has a magnitude factor of between 2 ÷ 4 while high doped silicon (strain) gage factor magnitude is between 150 ÷ 200, thus improving the substrate sensitivity considerably. Using those physical attributes allow us to create a MOEMS sensor resolving accuracy issues and saving space in any future MOEMS device design. Those devices will be able to measure any mechanical movement connected to the high doped silicon substrate by converting the physical strain created from the movement stress to current/voltage change in the substrate device. The simplicity of the device is that the device could measure movement without any need to implement an outer sensor to it. By measuring the device's strain change it would "feel" the movement and convert it to an analog value, thus creating a strain gage built in the MOEMS device surface.

Keywords

mechanical stress, MOEMS/MEMS, angular movement sensor

Copyright

This work is licensed under a Creative Commons Attribution 4.0 International License. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

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