By-emitter Emulation Enhancement Tool Using a Global Thermal Solver for the Degradation Emulation of a Calibrated 975 nm Tapered Laser Bar

Christian Kwaku Amuzuvi^{1, 2,} , Joseph Cudjoe Attachie¹ and Kofi Asante¹

¹Department of Electrical and Electronic Engineering, University of Mines and Technology, Tarkwa, Ghana

²Photonic and Radio Frequency Engineering Group (PRFEG), Electrical Systems and Optics Research Division, Faculty of Engineering, University of Nottingham, Nottingham, United Kingdom

Cite this paper

Christian Kwaku Amuzuvi, Joseph Cudjoe Attachie and Kofi Asante. By-emitter Emulation Enhancement Tool Using a Global Thermal Solver for the Degradation Emulation of a Calibrated 975 nm Tapered Laser Bar. American Journal of Electrical and Electronic Engineering. 2013; 1(3):60-63. doi: 10.12691/AJEEE-1-3-5

Abstract

In this paper, Barlase has been taken a step further by emulating the degradation processes in high power semiconductor laser bars using an upgraded version of Barlase by the introduction of a global thermal solver to further deepen the understanding of the behaviour of laser bars. In this paper, the emulation of a real laser bar was investigated to emulate experimental results by simulating the experimental results in the view of finding a correlation between them. The results established show a more elaborate frown shaped power/current profile and a corresponding frown shaped temperature profile especially at the front facet of the laser bar. Even though a more elaborate frown shaped profile was realised in the power, current and temperature profiles, it fell short from what was seen in the experimental results. As the emulation of laser bar degradation has not been attempted before, further work is needed to achieve better agreement in the output power, current and temperature profiles to better the model.

Keywords

by-emitter, emitter, calibration, tapered laser bar, power, Heatsink temperature, electroluminescence, near infra-red, degradation, trap density

Copyright

This work is licensed under a Creative Commons Attribution 4.0 International License. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

References

[1]	Schulz, W. and R. Poprawe, 2000. “Manufacturing with novel high-power diode lasers,” IEEE Journal of Selected Topics in Quantum Electronics, vol. 6, pp. 696-705.
[2]	Gannot, I and R. W. Waynant, 2001. “Introduction to the issue on lasers in medicine and biology”, IEEE Journal of Selected Topics in Quantum Electronics, vol. 7, pp. 873-873.
[3]	Rochat, E., K. Haroud, and R. Dandliker, 1999. “High-power Nd-doped fiber amplifier for coherent intersatellite links”, IEEE Journal of Quantum Electronics, vol. 35, pp. 1419-1423.
[4]	Amuzuvi, C. K. and J. C. Attachie, 2013. “Describing a Laser Diode Emulation Tool Using Single Emitter Simulation Results”. Research Journal of Applied Sciences, Engineering and Technology, 5(04): 1358-1361.
[5]	Xia, R., E. C. Larkins, I. Harrison, S. R. A. Dods, A. V. Andrianov, J. Morgan and J. P. Landesman, 2002. “Mounting-induced strain threshold for the degradation of high-power AlGaAs laser bars,” IEEE Photon. Technol. Lett., 14, 893.
[6]	Tomm J. W., A. Gerhardt, T. Elsaesser, D. Lorenzen, and P. Hennig, 2002. “Simultaneous quantification of strain and defects in high-power diode laser devices”, Applied Physics Letters, vol. 81, pp. 3269-3271.
[7]	Bull S., J. W. Tomm, M. Oudart, J. Nagle, C. Scholz, K. Boucke, I. Harrison, and E. C. Larkins, 2005. “By-emitter degradation analysis of high-power laser bars”, Journal of Applied Physics, vol. 98, p. 063101.
[8]	Lim, J. J., T. M. Benson and E. C. Larkins, 2005 “Design of wide-emitter single-mode laser diodes,” IEEE J. Quantum Electron., 41, 506.
[9]	Bream, P. J., J. J. Lim, S. Bull, A. V. Andrianov, S. Sujecki and E. C. Larkins, 2006. “The impact of nonequilibrium gain in a spectral laser diode model,” Opt. Quantum Electron., 38, 1019.
[10]	Lim J. J., S. Sujecki, L. Lang, Z. C. Zhang, D. Paboeuf, G. Pauliat, G. Lucas-Leclin, P. Georges, R. C. I. MacKenzie, P. Bream, S. Bull, K. H. Hasler, B. Sumpf, H. Wenzel, G. Erbert, B. Thestrup, P. M. Petersen, N. Michel, M. Krakowski, and E. C. Larkins, “Design and Simulation of Next-Generation High-Power, High-Brightness Laser Diodes,” IEEE Journal of Selected Topics in Quantum Electronics, vol. 15, pp. 993-1008, May-Jun 2009.
[11]	Sujecki S., L. Borruel, J. Wykes, P. Moreno, B. Sumpf, P. Sewell, H. Wenzel, T. A. Benson, G. Erbert, I. Esquivias, and E. C. Larkins, “Nonlinear properties of tapered laser cavities,” IEEE Journal of Selected Topics in Quantum Electronics, vol. 9, pp. 823-834, May-Jun 2003.
[12]	Amuzuvi C. K., S. Bull, J. J. Lim, S. Sujecki, and E. C. Larkins, “Numerical emulation of the degradation of 975nm high power tapered laser bars,” High Power Diode Lasers and Systems Conference, Coventry (UK) 2009. HPD 2009, 2009, pp. 1-2.
[13]	Amuzuvi C. K., S. Bull, J. W. Tomm, J. Nagle, E. C. Larkins, B. Sumpf, G. Erbert, N. Michel, and M. Krakowski, “The impact of temperature and packaging-induced strain on current competition and emitter power in laser bars,” Applied Physics Letter, June 2011.
[14]	Chen G. and C. L. Tien, “Facet heating of quantum-well lasers,” Journal of Applied Physics, vol. 74, pp. 2167-2174, Aug 1993.
[15]	Moser A., “Thermodynamics of facet damage in cleaved AlGaAs lasers,” Applied Physics Letters, vol. 59, pp. 522-524, 1991.
[16]	Schatz R. and C. G. Bethea, “Steady-state model for facet heating leading to thermal runaway in semiconductor-lasers,” Journal of Applied Physics, vol. 76, pp. 2509-2521, Aug 1994.
[17]	Henry C. H., P. M. Petroff, R. A. Logan, and F. R. Merritt, “Catastrophic damage of AlxGa1-xAs double-heterostructure laser material,” Journal of Applied Physics, vol. 50, pp. 3721-3732, 1979.
[18]	Tomm J. W., E. Thamm, A. Barwolff, T. Elsaesser, J. Luft, M. Baeumler, S. Mueller, W. Jantz, I. Rechenberg, and G. Erbert, “Facet degradation of high-power diode laser arrays,” Applied Physics a-Materials Science & Processing, vol. 70, pp. 377-381, 2000.