1 GHz CMOS Band-pass Filter Design Using an Active Inductor and Capacitor

Siavash Heydarzadeh^1, and Pooya Torkzadeh¹

¹Department of Electrical Engineering, Science and Research Branch, Islamic Azad University, Tehran, Iran

Cite this paper

Siavash Heydarzadeh and Pooya Torkzadeh. 1 GHz CMOS Band-pass Filter Design Using an Active Inductor and Capacitor. American Journal of Electrical and Electronic Engineering. 2013; 1(3):37-41. doi: 10.12691/AJEEE-1-3-1

Abstract

This work offers the use of an active inductor and capacitor to build RF band-pass filter with 0.18μm and TSMC process. Based on the proposed structure, a prototype 1 GHz active filter designed and simulated in a 0.18μm CMOS technology. Simulation results for the designed RF band-pass filter show S21 > 19dB and consuming power less than 14 mW from 1.8 V supply voltage. The absolute values of reflection parameters (|S11| and |S22|) are about 60 dB. Low-bandwidth linear noise at output node are less than -170 dB and Advanced Design System (ADS) used to produce 1 GHz band-pass active filter simulation results.

Keywords

active filter, active inductance, active capacitance, 0.18 μm CMOS technology, ADS

Copyright

This work is licensed under a Creative Commons Attribution 4.0 International License. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

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